| PART |
Description |
Maker |
| IM5603 IM5623 |
ELECTRICALLY PROGRAMMABLE 1024 BIT BIPOLAR READ ONLY MEMORY 1024位电可编程只读存储器双极
(IM5603 / IM5623) ELECTRICALLY PROGRAMMABLE 1024 BIT BIPOLAR READ ONLY MEMORY
|
Intersil, Corp.
Intersil Corporation
|
| PA7024 PA7024J-15 PA7024J-20 PA7024JI-25 PA7024JN- |
20ns programmable electrically erasable logic array
15ns programmable electrically erasable logic array
Programmable Electrically Erasable Logic Array 电可擦除可编程逻辑阵列
|
ICT
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
http://
|
| AM24LC08I AM24LC08INA AM24LC08ISA AM24LC08VSA AM24 |
RES, FXD, MF, CHIP, 121K, 1%, 1/16W, 0603
2-Wire Serial 8K-Bit (1024 x 8) CMOS Electrically Erasable PROM
|
ETC
ANACHIP[Anachip Corp]
|
| ADN2850 ADN2850ACP25-RL7 |
Nonvolatile Memory, Dual 1024 Position Programmable Resistors
Dual 10-Bit Programmable Non-Volatile Resistor
|
http://
Analog Devices
|
| 24C64 TU24C64CP2 TU24C64CP3 TU24C64CS2 TU24C64CS3 |
CMOSIC2-WIREBUS64KELECTRICALLYERASABLEPROGRAMMABLEROM8KX8BITEEPROM
From old datasheet system
CMOS I?C 2-WIRE BUS 64K ELECTRICALLY ERASABLE PROGRAMMABLE ROM 8K X 8 BIT EEPROM
CMOS I2C 2-WIRE BUS 64K ELECTRICALLY ERASABLE PROGRAMMABLE ROM 8K X 8 BIT EEPROM
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| 28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
|
Turbo IC
|
| PA7572 PA7572F-20L PA7572P-20L PA7572P-20 PA7572PI |
Programmable Electrically Erasable Logic Array
|
ANACHIP[Anachip Corp]
|
| PEEL22LV10AZ PEEL22LV10AZJ-25 PEEL22LV10AZJ-25L PE |
CMOS Programmable Electrically Erasable Logic Device
|
Anachip Corp
|
| AT24C02C |
Two-wire Serial Electrically Erasable and Programmable Read-only Memory
|
ATMEL
|
| ATF22V10BQL-25NM_883 ATF22V10B-10GM_883 ATF22V10BQ |
High-performance Electrically Erasable Programmable Logic Device
|
ATMEL Corporation
聚兴科技股份有限公司
|
| 24C04 |
ELECTRICALLY ERASABLE PROGRAMMABLE ROM 512 X 8 BIT EEPROM
|
Turbo IC
|
| ATTINY10 ATTINY9 ATTINY5 |
8-bit Microcontroller with 512/1024 Bytes In-System Programmable Flash
|
ATMEL Corporation
|
